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Light-emitting gallium nitride-based compound semiconductor device

Publication No. EP0599224
•
App No. EP93118670
•
Filed by Nichia Corporation
•
Filed on 1993-11-19
•
Issued/Published on 2008-04-09
Publication No. EP0599224 A1
Application No. EP93118670 Filed: 1993-11-19
Grant Date 2008-04-09 Mention of grant
Active Oppositions 7 Active EPO Oppositions

Patent Abstract / Summary

A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure (22) includes a light-emitting layer (18) formed of a low-resistivity InxGa1-xN (0 < x < 1) compound semiconductor doped with p-type and/or n-type impurity. A first clad layer (16) is joined to one surface of the light-emitting layer (18) and formed of an n-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer (18). A second clad layer (20) is joined to another surface of the light-emitting layer (18) and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer (18). <IMAGE>

IPC Classifications

H01L33/00

Priority Claims

JP 19920335556 Date: 1992-11-20
JP 19930018122 Date: 1993-01-08
JP 19930018123 Date: 1993-01-08
JP 19930070873 Date: 1993-03-05
JP 19930070874 Date: 1993-03-05
JP 19930114542 Date: 1993-05-17
JP 19930114543 Date: 1993-05-17
JP 19930114544 Date: 1993-05-17

Designated Contracting States (4 EPC States)

Germany Germany (DE) France France (FR) United Kingdom United Kingdom (GB) Netherlands Netherlands (NL)

Parties & Representation

Applicants

Nichia Corporation

491-100, Oka, Kaminaka-cho Anan-shi, Tokushima-ken

JP

NICHIA CHEMICAL INDUSTRIES, LTD.

491-100, Oka, Kaminaka-cho, Anan-shi, Tokushima-ken

JP

Inventors (4)

Nakamura, Shuji, c/o Nichia Chemical Ind., Ltd.

491-100, Oka, Kaminaka-cho, Anan-shi, Tokushima-ken

JP

Mukai, Takashi, c/o Nichia Chemical Ind., Ltd.

491-100, Oka, Kaminaka-cho, Anan-shi, Tokushima-ken

JP

Iwasa, Naruhito, c/o Nichia Chemical Ind., Ltd.

491-100, Oka, Kaminaka-cho, Anan-shi, Tokushima-ken

JP

Nakamura, Shiji, c/o Nichia Chemical Ind., Ltd.

491-100, Oka, Kaminaka-cho, Anan-shi, Tokushima-ken

JP

Representatives / Agents

Heusler, Wolfgang

V. Bezold & Partner, Patentanwälte - PartG mbB

DE

Heusler, Wolfgang, Dipl.-Ing.

Dr. Dieter von Bezold Dipl.-Ing. Peter Schütz Dipl.-Ing. Wolfgang Heusler Brienner Strasse 52, D-80333 München

DE

Epping, Wilhelm

Epping Hermann Fischer, Patentanwaltsgesellschaft mbH

DE

Hoffmann Eitle

Patent- und Rechtsanwälte PartmbB, Arabellastraße 30

DE

Epping, Wilhelm, Dipl.-Ing.

Epping Hermann & Fischer Ridlerstrasse 55, 80339 München

DE

HOFFMANN - EITLE

Patent- und Rechtsanwälte Arabellastrasse 4, 81925 München

DE

Epping, Wilhelm, Dr.-Ing.

Untertaxetweg 146, 82131 Gauting

DE

Key Procedural Dates

Request-For-Examination 1993-11-19
Patent-Maintained-As-Amended 2008-04-09
First-Examination-Report-Despatched 1995-12-20

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