Taiwan Semiconductor Manufacturing Company Limited. vs. Alidouble Inc.

Explore the PTAB proceeding IPR2023-00373 filed by Taiwan Semiconductor Manufacturing Company Limited. on 2022-12-16. This includes filing dates, application numbers, tech centers, patent numbers, and current case status.

Proceeding Overview

Proceeding Number

IPR2023-00373

Filing Date

2022-12-16

Accorded Filing Date

2022-12-16

Institution Decision Date

2023-07-12

Last Modified Date

2024-01-26

Proceeding Type

IPR

Termination Date

2024-01-26

Trial Status

Terminated-Settled

Parties & Counsel

Petitioner

Taiwan Semiconductor Manufacturing Company Limited.

Represented By

Glass, Jameset al

Patent Owner / Respondent

Alidouble Inc.

Represented By

Cohen, Eric

Tribunal & Venue

Tribunal

Patent Trial and Appeal Board (USPTO)

Technology Center

TC 2800 - Semiconductors, Electrical & Optical Systems

Patent Information

1 Patent Involved

Respondent Application Number 14536649

Respondent Patent Number 9431455

External Links

Espacenet

Google Patents

Respondent Inventor Amos Fenigstein et al

Respondent Tech Center TC 2800 - Semiconductors, Electrical & Optical Systems

Address and Attorney/Agent Information

3 Registered Practitioners

Power of Attorney & Correspondence

Firm / Entity Name BEVER HOFFMAN & HARMS, LLP - c/o Carrie Reddick, Office Manager

Customer Number 22888

Address 18486 Spring Valley Drive, Grass Valley, CA, 95945, UNITED STATES

Attorney / Agent Information

Reg #	Name	Phone
33834	Patrick Bever	408-718-1799
35537	Jeanette Harms	408-451-5907
38186	Edward Hoffman	925-895-3545

Proceeding Documents

Termination Decision: Post-DI Settlement TERMINATE

2024-01-26 FILING PARTY: BOARD

Download

Motion to Keep Confidential and Separate MOTION

2024-01-18 FILING PARTY: PETITIONER

Download

Joint Motion to Terminate MOTION

2024-01-18 FILING PARTY: PETITIONER

Download

Stipulation to Extend Dates NOTICE

2023-12-11 FILING PARTY: PETITIONER

Download

Petitioner's Notice of Objections to Evidence NOTICE

2023-10-18 FILING PARTY: PETITIONER

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Taiwan Semiconductor Manufacturing Company Limited. vs. Alidouble Inc.

Proceeding Overview

Parties & Counsel

Petitioner

Taiwan Semiconductor Manufacturing Company Limited.

Represented By

Patent Owner / Respondent

Alidouble Inc.

Represented By

Tribunal & Venue

Patent Information

Address and Attorney/Agent Information

Power of Attorney & Correspondence

Attorney / Agent Information

Proceeding Documents

Termination Decision: Post-DI Settlement TERMINATE

Motion to Keep Confidential and Separate MOTION

Joint Motion to Terminate MOTION

Stipulation to Extend Dates NOTICE

Petitioner's Notice of Objections to Evidence NOTICE

Stefanov, Design and Performance of a Pinned Photodiode CMOS Image sensor (2018) Exhibit

Declaration of Ron Maltiel Exhibit

Xiao, Chapter 10 - CVD and Dielectric Thin Film Exhibit

Patent Owner's Response RESPONSE

Wolf & Tauber, Silicon Processing for the VLSI Era, Volume 1: Process Technology Exhibit

Plasma-Therm: PECVD and HDPCVD Basics (2015) Exhibit

Curriculum Vitae, Ron Maltiel Exhibit

Patent Owner's Power of Attorney NOTICE

Patent Owner's Updated Mandatory Notice NOTICE

Decision Granting Institution of Inter Partes Review DECISION

Order: SCHEDULING ORDER ORDER

US Patent No. 3,849,204 Exhibit

OXIDATION OF SILICON (OXY)NITRIDE AND NITRIDATION OF SILICON DIOXIDE: MANIFESTATIONS OF THE SAME CHEMICAL REACTION SYSTEM? (1990) Exhibit

Suppression of hydrogen-ion drift into underlying layers using plasma deposited silicon oxynitride film during high-density plasma chemical vapor deposition (November 2006) Exhibit

Formation of size-controlled silicon nanocrystals in plasma enhanced chemical vapor deposition grown SiOxNy/SiO2 superlattices (2011) Exhibit

On the nitrogen and oxygen incorporation in plasma-enhanced chemical vapor deposition (PECVD) SiOxNy films (October 2001) Exhibit

Physical and electrical characterisation of oxynitride films produced by plasma oxidation of deposited silicon nitride layers (1995) Exhibit

Alidouble Inc., v. Taiwan Semiconductor Manufacturing Company Limited., Case No. 2:22-cv 00298-JRG (E.D. Tex), Docket Control Order. Exhibit

Patent Owner's Preliminary Response Under 37 C.F.R. § 42.107 POPR

Oxidation of silicon nitride films in an oxygen plasma (March 1999) Exhibit

Characteristics of SiOxNy films deposited by inductively coupled plasma enhanced chemical vapor deposition using HMDS/NH3/O2/Ar for water vapor diffusion barrier (September 2006) Exhibit

SiOxNy thin film deposited by plasma enhanced chemical vapor deposition at low temperature using HMDS–O2–NH3–Ar gas mixtures (September 2006) Exhibit

Notice: Notice filing date accorded NOTICE

Patent Owner's Power of Attorney NOTICE

Patent Owner's Power of Attorney NOTICE

Patent Owner's Mandatory Notice NOTICE

Patent Owner's Mandatory Notice NOTICE

Ex. 1021. Giapis_CV_10_2022_clean Exhibit

Ex. 1014. Wolf (Vol. 2) pp. 273-75, 318-19 Exhibit

Notice : Power of Attorney Paper

Petition : as filed Paper

Ex. 1007. Lee - US20090072282A1 Exhibit

Ex. 1020. 455 Giapis Decl (FINAL) Exhibit

Ex. 1004. Oshima certificate Exhibit

Ex. 1005. Oshima (EN) Exhibit

Ex. 1003. Oshima (JP) Exhibit

Ex. 1010. Wang - US7803647 Exhibit

Ex. 1019. Hwang, Modeling of Charging Damage During Interlevel Oxide Deposi Exhibit

Ex. 1001. US9431455 Exhibit

Ex. 1016. White, A_low_voltage_SONOS_nonvolatile_semiconductor_memory_techn Exhibit

Ex. 1012. Foggiato-CVD of Silicon Dioxide Films-2001 Exhibit

Ex. 1006. Nagai - US7598557 Exhibit

Ex. 1017. Frank, Approaches For Patterning of Aluminum (1997) Exhibit

Ex. 1002. US9431455 file history Exhibit

Ex. 1013. Wolf_I_p393-396 Exhibit

Ex. 1015. Stojakovic_2000_JVST Exhibit

Ex. 1018. Riley_1993_J._Electrochem._Soc._140_1518 Exhibit

Ex. 1008. Crook - US9165762 Exhibit

Ex. 1011. Omi - US7816749 Exhibit

Ex. 1009. Miyazaki_EP1065714A1 Exhibit